STMicroelectronics STripFET II N-Channel MOSFET, 25 A, 100 V, 3-Pin DPAK STD25NF10LT4
- RS Stock No.:
- 687-5068P
- Mfr. Part No.:
- STD25NF10LT4
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£13.30
(exc. VAT)
£16.00
(inc. VAT)
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In Stock
- 1,335 unit(s) ready to ship
- Plus 999,998,660 unit(s) shipping from 26 January 2026
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Units | Per unit |
|---|---|
| 10 - 20 | £1.33 |
| 25 - 95 | £1.282 |
| 100 - 495 | £1.024 |
| 500 + | £0.938 |
*price indicative
- RS Stock No.:
- 687-5068P
- Mfr. Part No.:
- STD25NF10LT4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 25 A | |
| Maximum Drain Source Voltage | 100 V | |
| Series | STripFET II | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 35 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 2.5V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 100 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -16 V, +16 V | |
| Transistor Material | Si | |
| Width | 6.2mm | |
| Typical Gate Charge @ Vgs | 38 nC @ 5 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.6mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -55 °C | |
| Height | 2.4mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 25 A | ||
Maximum Drain Source Voltage 100 V | ||
Series STripFET II | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 35 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 2.5V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 100 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -16 V, +16 V | ||
Transistor Material Si | ||
Width 6.2mm | ||
Typical Gate Charge @ Vgs 38 nC @ 5 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.6mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 2.4mm | ||
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics