N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK onsemi FQU1N60CTU

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	1 A
	Maximum Drain Source Voltage	600 V
	Package Type	IPAK (TO-251)
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	11.5 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	4.8 nC @ 10 V
	Width	2.3mm
	Length	6.6mm
	Number of Elements per Chip	1
	Maximum Operating Temperature	+150 °C
	Transistor Material	Si
	Height	6.1mm
	Series	QFET
	Minimum Operating Temperature	-55 °C

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 1 A
	Maximum Drain Source Voltage 600 V
	Package Type IPAK (TO-251)
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 11.5 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 4.8 nC @ 10 V
	Width 2.3mm
	Length 6.6mm
	Number of Elements per Chip 1
	Maximum Operating Temperature +150 °C
	Transistor Material Si
	Height 6.1mm
	Series QFET
	Minimum Operating Temperature -55 °C

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