N-Channel MOSFET, 11 A, 60 V, 3-Pin IPAK onsemi FQU13N06LTU
- RS Stock No.:
- 671-5339
- Mfr. Part No.:
- FQU13N06LTU
- Brand:
- onsemi
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 671-5339
- Mfr. Part No.:
- FQU13N06LTU
- Brand:
- onsemi
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 11 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | IPAK (TO-251) | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 115 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2.5 W | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 6.6mm | |
Width | 2.3mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 4.8 nC @ 5 V | |
Number of Elements per Chip | 1 | |
Height | 6.1mm | |
Minimum Operating Temperature | -55 °C | |
Series | QFET | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 11 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type IPAK (TO-251) | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 115 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.6mm | ||
Width 2.3mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.8 nC @ 5 V | ||
Number of Elements per Chip 1 | ||
Height 6.1mm | ||
Minimum Operating Temperature -55 °C | ||
Series QFET | ||