N-Channel MOSFET, 2.4 A, 800 V, 3-Pin TO-220AB onsemi FQP2N80

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Select all	Attribute	Value
	Brand	ON Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	2.4 A
	Maximum Drain Source Voltage	800 V
	Package Type	TO-220AB
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	6.3 Ω
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	85 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Maximum Operating Temperature	+150 °C
	Width	4.7mm
	Number of Elements per Chip	1
	Length	10.1mm
	Transistor Material	Si
	Typical Gate Charge @ Vgs	12 nC @ 10 V
	Minimum Operating Temperature	-55 °C
	Series	QFET
	Height	9.4mm

	Select all
	Brand ON Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 2.4 A
	Maximum Drain Source Voltage 800 V
	Package Type TO-220AB
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 6.3 Ω
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 85 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Maximum Operating Temperature +150 °C
	Width 4.7mm
	Number of Elements per Chip 1
	Length 10.1mm
	Transistor Material Si
	Typical Gate Charge @ Vgs 12 nC @ 10 V
	Minimum Operating Temperature -55 °C
	Series QFET
	Height 9.4mm

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