- RS Stock No.:
- 671-5010
- Mfr. Part No.:
- FQP12P20
- Brand:
- onsemi
Available to back order for despatch when stock is available
Added
Price Each (In a Pack of 5)
£1.988
(exc. VAT)
£2.386
(inc. VAT)
Units | Per unit | Per Pack* |
5 - 20 | £1.988 | £9.94 |
25 - 95 | £1.66 | £8.30 |
100 - 245 | £1.274 | £6.37 |
250 - 495 | £1.224 | £6.12 |
500 + | £1.178 | £5.89 |
*price indicative |
- RS Stock No.:
- 671-5010
- Mfr. Part No.:
- FQP12P20
- Brand:
- onsemi
Technical Reference
Legislation and Compliance
Product Details
QFET® P-Channel MOSFET, Fairchild Semiconductor
Fairchild Semiconductors new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
Specifications
Attribute | Value |
---|---|
Channel Type | P |
Maximum Continuous Drain Current | 11.5 A |
Maximum Drain Source Voltage | 200 V |
Package Type | TO-220AB |
Series | QFET |
Mounting Type | Through Hole |
Pin Count | 3 |
Maximum Drain Source Resistance | 470 mΩ |
Channel Mode | Enhancement |
Minimum Gate Threshold Voltage | 3V |
Maximum Power Dissipation | 120 W |
Transistor Configuration | Single |
Maximum Gate Source Voltage | -30 V, +30 V |
Typical Gate Charge @ Vgs | 31 nC @ 10 V |
Transistor Material | Si |
Width | 4.7mm |
Length | 10.1mm |
Number of Elements per Chip | 1 |
Maximum Operating Temperature | +150 °C |
Minimum Operating Temperature | -55 °C |
Height | 9.4mm |
Related links
- N-Channel MOSFET 200 V, 3-Pin TO-220AB onsemi FQP34N20
- N-Channel MOSFET 200 V, 3-Pin TO-220AB onsemi FDP61N20
- P-Channel MOSFET 200 V, 3-Pin TO-220AB Vishay IRF9640PBF
- P-Channel MOSFET 60 V, 8-Pin PowerPAK 1212-8W Vishay SQ7415CENW-T1_GE3
- P-Channel MOSFET 200 V, 3-Pin TO-220AB Vishay IRF9630PBF
- P-Channel MOSFET 30 V, 8-Pin PowerPAK 1212-8 Vishay SI7129DN-T1-GE3
- P-Channel MOSFET 200 V, 3-Pin D2PAK onsemi FQB12P20TM
- P-Channel MOSFET 200 V, 3-Pin TO-220AB Vishay IRF9610PBF