onsemi QFET N-Channel MOSFET, 32 A, 200 V, 3-Pin TO-3PN FQA32N20C
- RS Stock No.:
- 671-4935
- Mfr. Part No.:
- FQA32N20C
- Brand:
- onsemi
Bulk discount available
Subtotal (1 pack of 5 units)*
£10.75
(exc. VAT)
£12.90
(inc. VAT)
Stock information currently inaccessible - Please check back later
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 5 | £2.15 | £10.75 |
| 10 - 95 | £1.736 | £8.68 |
| 100 - 495 | £1.434 | £7.17 |
| 500 - 995 | £1.198 | £5.99 |
| 1000 + | £1.02 | £5.10 |
*price indicative
- RS Stock No.:
- 671-4935
- Mfr. Part No.:
- FQA32N20C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 32 A | |
| Maximum Drain Source Voltage | 200 V | |
| Series | QFET | |
| Package Type | TO-3PN | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 82 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 204 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 5mm | |
| Typical Gate Charge @ Vgs | 82.5 nC @ 10 V | |
| Length | 15.8mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Height | 18.9mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 32 A | ||
Maximum Drain Source Voltage 200 V | ||
Series QFET | ||
Package Type TO-3PN | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 82 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 204 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 5mm | ||
Typical Gate Charge @ Vgs 82.5 nC @ 10 V | ||
Length 15.8mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Height 18.9mm | ||
Minimum Operating Temperature -55 °C | ||