Enhancement Mode P-Channel MOSFET, ON Semiconductor

ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:

• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:

• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	onsemi
	Channel Type	P
	Maximum Continuous Drain Current	5.4 A
	Maximum Drain Source Voltage	60 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	451 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-25 V, +25 V
	Length	6.73mm
	Transistor Material	Si
	Maximum Operating Temperature	+150 °C
	Width	6.22mm
	Typical Gate Charge @ Vgs	6.3 nC @ 10 V
	Number of Elements per Chip	1
	Minimum Operating Temperature	-55 °C
	Height	2.39mm

	Select all
	Brand onsemi
	Channel Type P
	Maximum Continuous Drain Current 5.4 A
	Maximum Drain Source Voltage 60 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 451 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -25 V, +25 V
	Length 6.73mm
	Transistor Material Si
	Maximum Operating Temperature +150 °C
	Width 6.22mm
	Typical Gate Charge @ Vgs 6.3 nC @ 10 V
	Number of Elements per Chip 1
	Minimum Operating Temperature -55 °C
	Height 2.39mm

onsemi P-Channel MOSFET, 5.4 A, 60 V, 3-Pin DPAK FQD7P06TM

Enhancement Mode P-Channel MOSFET, ON Semiconductor

Features and Benefits:

Applications:

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