onsemi QFET N-Channel MOSFET, 10 A, 100 V, 3-Pin DPAK FQD13N10TM
- RS Stock No.:
- 671-0961P
- Mfr. Part No.:
- FQD13N10TM
- Brand:
- onsemi
Subtotal 5 units (supplied on a continuous strip)*
£0.98
(exc. VAT)
£1.175
(inc. VAT)
FREE delivery for orders over £50.00
Last RS stock
- Final 2,670 unit(s), ready to ship
Units | Per unit |
|---|---|
| 5 + | £0.196 |
*price indicative
- RS Stock No.:
- 671-0961P
- Mfr. Part No.:
- FQD13N10TM
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 10 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | DPAK (TO-252) | |
| Series | QFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 180 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -25 V, +25 V | |
| Width | 6.1mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 6.6mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 12 nC @ 10 V | |
| Height | 2.3mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 10 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type DPAK (TO-252) | ||
Series QFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 180 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -25 V, +25 V | ||
Width 6.1mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 6.6mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 12 nC @ 10 V | ||
Height 2.3mm | ||
Minimum Operating Temperature -55 °C | ||
- COO (Country of Origin):
- MY
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Fairchild Semiconductor’s new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.
MOSFET Transistors, ON Semi
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ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.