onsemi Dual N-Channel MOSFET, 6 A, 40 V, 8-Pin SOIC FDS8949
- RS Stock No.:
- 671-0747
- Mfr. Part No.:
- FDS8949
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£5.20
(exc. VAT)
£6.25
(inc. VAT)
FREE delivery for orders over £50.00
- 45 unit(s) ready to ship
- Plus 3,235 unit(s) shipping from 09 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £1.04 | £5.20 |
50 - 95 | £0.896 | £4.48 |
100 - 495 | £0.778 | £3.89 |
500 - 995 | £0.684 | £3.42 |
1000 + | £0.622 | £3.11 |
*price indicative
- RS Stock No.:
- 671-0747
- Mfr. Part No.:
- FDS8949
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 6 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | SOIC | |
Mounting Type | Surface Mount | |
Pin Count | 8 | |
Maximum Drain Source Resistance | 29 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 2 W | |
Transistor Configuration | Isolated | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Length | 5mm | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 7.7 nC @ 5 V | |
Width | 4mm | |
Number of Elements per Chip | 2 | |
Minimum Operating Temperature | -55 °C | |
Height | 1.5mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 29 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Length 5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 7.7 nC @ 5 V | ||
Width 4mm | ||
Number of Elements per Chip 2 | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Automotive Dual N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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