Name: Fairchild UltraFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC FDS3692
Brand: Fairchild Semiconductor
SKU: 671-0501
Price: 0.84 GBP
Availability: Discontinued

UltraFET® MOSFET, Fairchild Semiconductor

UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, ON Semi

ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Select all	Attribute	Value
	Brand	Fairchild Semiconductor
	Channel Type	N
	Maximum Continuous Drain Current	4.5 A
	Maximum Drain Source Voltage	100 V
	Series	UltraFET
	Package Type	SOIC
	Mounting Type	Surface Mount
	Pin Count	8
	Maximum Drain Source Resistance	60 mΩ
	Channel Mode	Enhancement
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.5 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	11 nC @ 10 V
	Transistor Material	Si
	Width	4mm
	Number of Elements per Chip	1
	Length	5mm
	Maximum Operating Temperature	+150 °C
	Height	1.5mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Fairchild Semiconductor
	Channel Type N
	Maximum Continuous Drain Current 4.5 A
	Maximum Drain Source Voltage 100 V
	Series UltraFET
	Package Type SOIC
	Mounting Type Surface Mount
	Pin Count 8
	Maximum Drain Source Resistance 60 mΩ
	Channel Mode Enhancement
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.5 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 11 nC @ 10 V
	Transistor Material Si
	Width 4mm
	Number of Elements per Chip 1
	Length 5mm
	Maximum Operating Temperature +150 °C
	Height 1.5mm
	Minimum Operating Temperature -55 °C

Fairchild UltraFET N-Channel MOSFET, 4.5 A, 100 V, 8-Pin SOIC FDS3692

UltraFET® MOSFET, Fairchild Semiconductor

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