onsemi PowerTrench P-Channel MOSFET, 1.25 A, 60 V, 3-Pin SOT-23 FDN5618P
- RS Stock No.:
- 671-0463
- Mfr. Part No.:
- FDN5618P
- Brand:
- onsemi
Subtotal (1 pack of 5 units)*
£2.16
(exc. VAT)
£2.59
(inc. VAT)
FREE delivery for orders over £50.00
- Plus 205 unit(s) shipping from 13 October 2025
- Plus 55 unit(s) shipping from 13 October 2025
- Plus 56,820 unit(s) shipping from 20 October 2025
Units | Per unit | Per Pack* |
---|---|---|
5 - 45 | £0.432 | £2.16 |
50 - 95 | £0.408 | £2.04 |
100 - 245 | £0.344 | £1.72 |
250 - 495 | £0.324 | £1.62 |
500 + | £0.304 | £1.52 |
*price indicative
- RS Stock No.:
- 671-0463
- Mfr. Part No.:
- FDN5618P
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | P | |
Maximum Continuous Drain Current | 1.25 A | |
Maximum Drain Source Voltage | 60 V | |
Package Type | SOT-23 | |
Series | PowerTrench | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 170 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Width | 1.4mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Length | 2.92mm | |
Number of Elements per Chip | 1 | |
Typical Gate Charge @ Vgs | 8.6 nC @ 10 V | |
Height | 0.94mm | |
Minimum Operating Temperature | -55 °C | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 1.25 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-23 | ||
Series PowerTrench | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 170 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 1.4mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 2.92mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 8.6 nC @ 10 V | ||
Height 0.94mm | ||
Minimum Operating Temperature -55 °C | ||
PowerTrench® P-Channel MOSFET, Fairchild Semiconductor
The latest PowerTrench® MOSFETs employa shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (Figure of Merit) of these devices is significant lower than that of previous generations.
Soft body diode performance of the PowerTrench® MOSFETs is able to eliminate snubber circuits or replace a higher voltage rating MOSFET.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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