onsemi N-Channel MOSFET, 1.9 A, 30 V, 3-Pin SOT-23 FDN357N
- RS Stock No.:
- 671-0441P
- Mfr. Part No.:
- FDN357N
- Brand:
- onsemi
Subtotal 50 units (supplied on a continuous strip)*
£13.50
(exc. VAT)
£16.00
(inc. VAT)
FREE delivery for orders over £50.00
- 2,255 unit(s) ready to ship
- Plus 999,997,740 unit(s) shipping from 01 January 2026
Units | Per unit |
---|---|
50 - 95 | £0.27 |
100 - 495 | £0.234 |
500 - 995 | £0.206 |
1000 + | £0.188 |
*price indicative
- RS Stock No.:
- 671-0441P
- Mfr. Part No.:
- FDN357N
- Brand:
- onsemi
Select all | Attribute | Value |
---|---|---|
Brand | onsemi | |
Channel Type | N | |
Maximum Continuous Drain Current | 1.9 A | |
Maximum Drain Source Voltage | 30 V | |
Package Type | SOT-23 | |
Mounting Type | Surface Mount | |
Pin Count | 3 | |
Maximum Drain Source Resistance | 600 mΩ | |
Channel Mode | Enhancement | |
Minimum Gate Threshold Voltage | 1V | |
Maximum Power Dissipation | 500 mW | |
Transistor Configuration | Single | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Length | 2.92mm | |
Transistor Material | Si | |
Maximum Operating Temperature | +150 °C | |
Typical Gate Charge @ Vgs | 4.2 nC @ 5 V | |
Width | 1.4mm | |
Number of Elements per Chip | 1 | |
Minimum Operating Temperature | -55 °C | |
Height | 0.94mm | |
Select all | ||
---|---|---|
Brand onsemi | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.9 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 500 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 2.92mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 4.2 nC @ 5 V | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -55 °C | ||
Height 0.94mm | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.