onsemi P-Channel MOSFET, 130 mA, 50 V, 3-Pin SOT-23 BSS84

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£2.20

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£2.60

(inc. VAT)

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  • 1,240 unit(s) ready to ship
  • Plus 400 unit(s) ready to ship from another location
  • Plus 1,490 unit(s) shipping from 08 December 2025
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Per Pack*
10 - 90£0.22£2.20
100 - 240£0.19£1.90
250 - 490£0.164£1.64
500 - 990£0.145£1.45
1000 +£0.132£1.32

*price indicative

Packaging Options:
RS Stock No.:
671-0328
Mfr. Part No.:
BSS84
Brand:
onsemi
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Brand

onsemi

Channel Type

P

Maximum Continuous Drain Current

130 mA

Maximum Drain Source Voltage

50 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

10 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

0.8V

Maximum Power Dissipation

360 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Transistor Material

Si

Number of Elements per Chip

1

Width

1.3mm

Typical Gate Charge @ Vgs

0.9 nC @ 5 V

Length

2.92mm

Maximum Operating Temperature

+150 °C

Height

0.93mm

Minimum Operating Temperature

-55 °C

Enhancement Mode P-Channel MOSFET, ON Semiconductor


ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.

Features and Benefits:


• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology

Applications:


• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

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