onsemi N-Channel MOSFET, 115 mA, 60 V, 3-Pin SOT-23 2N7002

View all MOSFETs
Bulk discount available

Subtotal (1 pack of 20 units)*

£3.76

(exc. VAT)

£4.52

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 2,340 unit(s) shipping from 27 October 2025
  • Plus 1,520 unit(s) shipping from 27 October 2025
  • Plus 3,060 unit(s) shipping from 03 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per unit
Per Pack*
20 - 180£0.188£3.76
200 - 480£0.162£3.24
500 - 980£0.14£2.80
1000 - 1980£0.123£2.46
2000 +£0.112£2.24

*price indicative

Packaging Options:
RS Stock No.:
671-0312
Distrelec Article No.:
304-08-906
Mfr. Part No.:
2N7002
Brand:
onsemi
Find similar products by selecting one or more attributes.
Select all

Brand

onsemi

Channel Type

N

Maximum Continuous Drain Current

115 mA

Maximum Drain Source Voltage

60 V

Package Type

SOT-23

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

7.5 Ω

Channel Mode

Enhancement

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

200 mW

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

2.92mm

Number of Elements per Chip

1

Width

1.3mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

0.93mm

COO (Country of Origin):
CN

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor


Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.


MOSFET Transistors, ON Semi


ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Related links