Diodes Inc P-Channel MOSFET, 700 mA, 100 V, 3-Pin SOT-23 ZXMP10A13FTA
- RS Stock No.:
- 669-7616P
- Mfr. Part No.:
- ZXMP10A13FTA
- Brand:
- DiodesZetex
Bulk discount available
Subtotal 150 units (supplied on a reel)*
£48.00
(exc. VAT)
£57.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 20,600 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 150 - 725 | £0.32 |
| 750 - 1475 | £0.271 |
| 1500 + | £0.222 |
*price indicative
- RS Stock No.:
- 669-7616P
- Mfr. Part No.:
- ZXMP10A13FTA
- Brand:
- DiodesZetex
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | DiodesZetex | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 700 mA | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1 Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Maximum Power Dissipation | 806 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 3.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Typical Gate Charge @ Vgs | 1.8 nC @ 5 V, 3.5 nC @ 10 V | |
| Width | 1.4mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Height | 1mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand DiodesZetex | ||
Channel Type P | ||
Maximum Continuous Drain Current 700 mA | ||
Maximum Drain Source Voltage 100 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1 Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Maximum Power Dissipation 806 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 3.05mm | ||
Maximum Operating Temperature +150 °C | ||
Typical Gate Charge @ Vgs 1.8 nC @ 5 V, 3.5 nC @ 10 V | ||
Width 1.4mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Height 1mm | ||
Minimum Operating Temperature -55 °C | ||
P-Channel MOSFET, 100V to 450V, Diodes Inc
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