Infineon HEXFET N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK IRFR4105ZPBF
- RS Stock No.:
- 650-4407
- Mfr. Part No.:
- IRFR4105ZPBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 650-4407
- Mfr. Part No.:
- IRFR4105ZPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Series | HEXFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 25 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 48 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 18 nC @ 10 V | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Series HEXFET | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 25 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 48 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Length 6.73mm | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 18 nC @ 10 V | ||
Width 6.22mm | ||
Transistor Material Si | ||
Height 2.39mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 48W Maximum Power Dissipation - IRFR4105ZTRPBF
This MOSFET is designed for high efficiency and reliAbility across a variety of electronic applications. It is essential for voltage regulation and switching, meeting the needs of automation, electronics, and electrical engineering sectors with its robust performance. The device's low on-resistance and Ability to handle high continuous drain currents enable its use in demanding environments.
Features & Benefits
• Maximum continuous drain current of 30A ensures strong performance
• Operates at a maximum drain-source voltage of 55V for high voltage applications
• Low RDS(on) of 24.5mΩ improves energy efficiency
• Withstands temperature fluctuations up to +175°C
• Enhancement mode technology provides dependable switched operation
• DPAK TO-252 package allows for easy surface mounting
Applications
• Power management systems for effective voltage regulation
• Motor drivers and power converters in automation
• Switching power supplies and inverters
• Consumer electronics requiring efficient power control
What is the maximum gate threshold voltage?
The maximum gate threshold voltage is 4V, allowing for optimal gate control in switching applications.
Can it handle high temperatures?
Yes, this MOSFET operates efficiently at temperatures ranging from -55°C to +175°C, suitable for challenging environments.
Is this MOSFET suitable for surface mounting?
Yes, it comes in a DPAK TO-252 package designed for straightforward surface mount integration.
How does it compare with other MOSFETs in terms of power dissipation?
The maximum power dissipation capacity is 48W, enabling it to manage substantial loads effectively.
What types of applications are most compatible with this component?
It is particularly effective in applications requiring high efficiency, including motor control, power converters, and electrical systems in automation.