Name: N-Channel MOSFET, 32 A, 100 V, 3-Pin DPAK Infineon IRFR3411PBF
Brand: Infineon
SKU: 650-4328
Price: 1.38 GBP
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	32 A
	Maximum Drain Source Voltage	100 V
	Package Type	DPAK (TO-252)
	Mounting Type	Surface Mount
	Pin Count	3
	Maximum Drain Source Resistance	44 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	130 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Typical Gate Charge @ Vgs	48 nC @ 10 V
	Transistor Material	Si
	Maximum Operating Temperature	+175 °C
	Width	6.22mm
	Number of Elements per Chip	1
	Length	6.73mm
	Height	2.39mm
	Minimum Operating Temperature	-55 °C
	Series	HEXFET

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 32 A
	Maximum Drain Source Voltage 100 V
	Package Type DPAK (TO-252)
	Mounting Type Surface Mount
	Pin Count 3
	Maximum Drain Source Resistance 44 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 130 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Typical Gate Charge @ Vgs 48 nC @ 10 V
	Transistor Material Si
	Maximum Operating Temperature +175 °C
	Width 6.22mm
	Number of Elements per Chip 1
	Length 6.73mm
	Height 2.39mm
	Minimum Operating Temperature -55 °C
	Series HEXFET

Infineon HEXFET Series MOSFET, 32A Maximum Continuous Drain Current, 130W Maximum Power Dissipation - IRFR3411TRPBF

This MOSFET is crucial for high-power electronic applications, delivering robust performance with low on-resistance and a wide operating temperature range. Utilising HEXFET technology, it ensures efficient operation, making it suitable for various industrial and automation tasks. Its surface-mount DPAK (TO-252) package facilitates easy integration into electronic circuits, while the enhancement mode design optimises switching efficiency.

Features & Benefits

• Continuous drain current capability of 32A for versatile applications

• Maximum voltage rating of 100V for flexible usage

• Low RDS(on) of 44mΩ reduces power loss and heat generation

• Maximum power dissipation of 130W for enhanced durability

• Supports high-speed switching for improved circuit performance

• Surface mounting design simplifies PCB integration

Applications

• Utilised in DC-DC converters within industrial power supply systems

• Effective for motor control circuits in robotics and automation

• Suitable for power management in telecommunications equipment

• Employed in electronic lighting systems for energy efficiency

What type of PCB mounting methods are compatible with this device?

It is designed for surface mounting using vapour phase, infrared, or wave soldering techniques, ensuring versatility in assembly methods.

Can this device handle pulsed drain currents?

Yes, it is rated for pulsed drain currents up to 110A, allowing flexibility in transient load conditions without damage.

What is the thermal resistance for this component?

The junction-to-case thermal resistance is 1.2°C/W, enabling effective heat management during operation.

What temperature range can it operate in?

This MOSFET operates effectively between -55°C and +175°C, suited for extreme environmental conditions.

How does the gate charge impact performance?

With a typical gate charge of 48nC at 10V, it ensures faster switching times, reducing losses and improving efficiency in circuits.