P-Channel MOSFET 100V 0.4A D2Pak IRF5210

Unavailable
RS will no longer stock this product.
RS Stock No.:
650-3729
Mfr. Part No.:
IRF5210SPBF
Brand:
International Rectifier
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Brand

International Rectifier

Channel Type

P

Maximum Continuous Drain Current

38 A

Maximum Drain Source Voltage

100 V

Package Type

D2PAK

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

60 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

3.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

4.69mm

Typical Gate Charge @ Vgs

150 nC @ 10 V

Transistor Material

Si

P-Channel Power MOSFET 100V to 150V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.