P-Channel MOSFET, 780 mA, 20 V, 3-Pin SOT-23 Infineon IRLML6302TRPBF
- RS Stock No.:
- 610-6851
- Mfr. Part No.:
- IRLML6302TRPBF
- Brand:
- Infineon
Bulk discount available
Subtotal (1 pack of 5 units)*
£2.03
(exc. VAT)
£2.435
(inc. VAT)
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Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £0.406 | £2.03 |
| 25 - 95 | £0.234 | £1.17 |
| 100 - 245 | £0.124 | £0.62 |
| 250 - 495 | £0.12 | £0.60 |
| 500 + | £0.118 | £0.59 |
*price indicative
- RS Stock No.:
- 610-6851
- Mfr. Part No.:
- IRLML6302TRPBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 780 mA | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 600 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.5V | |
| Minimum Gate Threshold Voltage | 0.7V | |
| Maximum Power Dissipation | 540 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Transistor Material | Si | |
| Width | 1.4mm | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 2.4 nC @ 4.5 V | |
| Length | 3.05mm | |
| Maximum Operating Temperature | +150 °C | |
| Height | 1.01mm | |
| Minimum Operating Temperature | -55 °C | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 780 mA | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 600 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.5V | ||
Minimum Gate Threshold Voltage 0.7V | ||
Maximum Power Dissipation 540 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Transistor Material Si | ||
Width 1.4mm | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 2.4 nC @ 4.5 V | ||
Length 3.05mm | ||
Maximum Operating Temperature +150 °C | ||
Height 1.01mm | ||
Minimum Operating Temperature -55 °C | ||
Series HEXFET | ||
P-Channel Power MOSFET 12V to 20V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
