P-Channel MOSFET, 31 A, 55 V, 3-Pin DPAK Infineon IRFR5305PBF
- RS Stock No.:
- 543-2496
- Mfr. Part No.:
- IRFR5305PBF
- Brand:
- Infineon
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Subtotal (1 unit)*
£1.07
(exc. VAT)
£1.28
(inc. VAT)
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Units | Per unit |
|---|---|
| 1 - 9 | £1.07 |
| 10 - 24 | £1.01 |
| 25 - 49 | £0.95 |
| 50 - 99 | £0.90 |
| 100 + | £0.86 |
*price indicative
- RS Stock No.:
- 543-2496
- Mfr. Part No.:
- IRFR5305PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 31 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 65 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 110 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 6.22mm | |
| Typical Gate Charge @ Vgs | 63 nC @ 10 V | |
| Maximum Operating Temperature | +175 °C | |
| Length | 6.73mm | |
| Number of Elements per Chip | 1 | |
| Transistor Material | Si | |
| Height | 2.39mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 31 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 65 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 110 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 6.22mm | ||
Typical Gate Charge @ Vgs 63 nC @ 10 V | ||
Maximum Operating Temperature +175 °C | ||
Length 6.73mm | ||
Number of Elements per Chip 1 | ||
Transistor Material Si | ||
Height 2.39mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Infineon HEXFET Series MOSFET, 31A Maximum Continuous Drain Current, 110W Maximum Power Dissipation - IRFR5305TRPBF
This MOSFET offers advanced performance for various electronic applications. Its low on-resistance and high current handling capabilities contribute to effective power management. With a robust design and reliable electrical characteristics, this component is suitable for various environments in automation and electronic systems.
Features & Benefits
• Achieves low on-resistance for enhanced efficiency
• Supports a maximum continuous drain current of 31A
• Designed for ease of use in surface mount applications
• Capable of operating within a temperature range of -55°C to +175°C
• Facilitates quick switching speeds for improved performance
• Allows a maximum power dissipation of 110W for diverse applications
Applications
• Utilised in power management systems
• Suitable for motor control
• Employed in switching power supplies for electronic devices
• Used in automotive circuits for improved efficiency
What are the recommended soldering techniques for installation?
Use vapour phase, infrared, or wave soldering techniques for optimal results, ensuring minimal thermal stress on the component.
Can it handle high temperature environments?
Yes, it operates effectively within a temperature range of -55°C to +175°C, making it appropriate for extreme conditions.
What is the significance of low RDS(on)?
Low RDS(on) reduces power losses, enhancing overall efficiency and decreasing heat generation during operation.
How do I ensure accurate switching behaviour?
Implement suitable gate drive circuits to achieve precise turn-on and turn-off characteristics, following the suggested trigger voltages.
Is this compatible with standard PCB layouts?
Yes, it is designed in DPAK packaging, enabling straightforward integration into typical PCB designs without the need for special modifications.