N-Channel MOSFET, 2.7 A, 55 V, 3 + Tab-Pin SOT-223 Infineon IRFL014NPBF

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Unavailable
RS will no longer stock this product.
Packaging Options:
RS Stock No.:
543-1651P
Mfr. Part No.:
IRFL014NPBF
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

55 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

6.7mm

Transistor Material

Si

Number of Elements per Chip

1

Typical Gate Charge @ Vgs

7 nC @ 10 V

Maximum Operating Temperature

+150 °C

Width

3.7mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

1.7mm

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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