N-Channel MOSFET, 2.7 A, 55 V, 3 + Tab-Pin SOT-223 Infineon IRFL014NPBF

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

2.7 A

Maximum Drain Source Voltage

55 V

Package Type

SOT-223

Mounting Type

Surface Mount

Pin Count

3 + Tab

Maximum Drain Source Resistance

160 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

2.1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

7 nC @ 10 V

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

6.7mm

Width

3.7mm

Number of Elements per Chip

1

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

1.7mm