N-Channel MOSFET, 55 A, 100 V, 3-Pin TO-220AB Infineon IRL2910PBF

RS Stock No.:: 543-1229
Mfr. Part No.:: IRL2910PBF
Brand:: Infineon

N-Channel MOSFET, 55 A, 100 V, 3-Pin TO-220AB Infineon IRL2910PBF

6 In stock for delivery within 1 working days

Total Price (1 Units)

£1.91

(exc. VAT)

£2.29

(inc. VAT)

Not available for guaranteed pre 9am/10am delivery

Units	Per unit
1 +	£1.91

RS Stock No.:: 543-1229
Mfr. Part No.:: IRL2910PBF
Brand:: Infineon

IRL2910PBF Data Sheet
ESD Control Selection Guide V1

RS Stock No.:: 543-1229
Mfr. Part No.:: IRL2910PBF
Brand:: Infineon

IRL2910PBF Data Sheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	26 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	4.69mm
Typical Gate Charge @ Vgs	140 nC @ 5 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	10.54mm
Minimum Operating Temperature	-55 °C
Height	8.77mm

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	55 A
Maximum Drain Source Voltage	100 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	26 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	2V
Minimum Gate Threshold Voltage	1V
Maximum Power Dissipation	200 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-16 V, +16 V
Width	4.69mm
Typical Gate Charge @ Vgs	140 nC @ 5 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	10.54mm
Minimum Operating Temperature	-55 °C
Height	8.77mm

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