Vishay N-Channel MOSFET, 4.3 A, 1000 V, 3-Pin TO-247AC IRFPG40PBF
- RS Stock No.:
- 542-9939
- Distrelec Article No.:
- 301-91-595
- Mfr. Part No.:
- IRFPG40PBF
- Brand:
- Vishay
Bulk discount available
Subtotal (1 unit)*
£4.14
(exc. VAT)
£4.97
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 53 unit(s) ready to ship
- Plus 598 unit(s) shipping from 28 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £4.14 |
| 10 - 49 | £3.89 |
| 50 - 99 | £3.53 |
| 100 - 249 | £3.31 |
| 250 + | £3.11 |
*price indicative
- RS Stock No.:
- 542-9939
- Distrelec Article No.:
- 301-91-595
- Mfr. Part No.:
- IRFPG40PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 4.3 A | |
| Maximum Drain Source Voltage | 1000 V | |
| Package Type | TO-247AC | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3.5 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 150 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 120 nC @ 10 V | |
| Length | 15.87mm | |
| Width | 5.31mm | |
| Height | 20.7mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 4.3 A | ||
Maximum Drain Source Voltage 1000 V | ||
Package Type TO-247AC | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3.5 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 150 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 120 nC @ 10 V | ||
Length 15.87mm | ||
Width 5.31mm | ||
Height 20.7mm | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 600V to 1000V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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