N-Channel MOSFET, 21 A, 55 V, 3-Pin TO-220 Infineon IRFIZ34NPBF

Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
RS Stock No.:
542-9743
Mfr. Part No.:
IRFIZ34NPBF
Brand:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

21 A

Maximum Drain Source Voltage

55 V

Package Type

TO-220

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

40 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

4V

Minimum Gate Threshold Voltage

2V

Maximum Power Dissipation

37 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Length

10.75mm

Typical Gate Charge @ Vgs

34 nC @ 10 V

Number of Elements per Chip

1

Maximum Operating Temperature

+175 °C

Transistor Material

Si

Width

4.83mm

Minimum Operating Temperature

-55 °C

Series

HEXFET

Height

9.8mm

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.