Vishay IRFBC20 Type N-Channel Power MOSFET, 2.2 A, 600 V Enhancement, 3-Pin TO-220AB
- RS Stock No.:
- 542-9490
- Mfr. Part No.:
- IRFBC20PBF
- Brand:
- Vishay
Bulk discount available
View bulk pricing optionsSubtotal (1 unit)*
£0.56
(exc. VAT)
£0.67
(inc. VAT)
FREE delivery for orders over £60.00
In Stock
- Plus 989 unit(s) shipping from 22 June 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 - 9 | £0.56 |
| 10 - 49 | £0.47 |
| 50 - 99 | £0.46 |
| 100 - 249 | £0.42 |
| 250 + | £0.39 |
*price indicative
- RS Stock No.:
- 542-9490
- Mfr. Part No.:
- IRFBC20PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | Power MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 2.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | IRFBC20 | |
| Package Type | TO-220AB | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 4.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Forward Voltage Vf | 2V | |
| Maximum Operating Temperature | 150°C | |
| Length | 10.41mm | |
| Width | 4.7mm | |
| Standards/Approvals | RoHS | |
| Height | 9.01mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type Power MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 2.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Series IRFBC20 | ||
Package Type TO-220AB | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 4.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Forward Voltage Vf 2V | ||
Maximum Operating Temperature 150°C | ||
Length 10.41mm | ||
Width 4.7mm | ||
Standards/Approvals RoHS | ||
Height 9.01mm | ||
Automotive Standard No | ||
Vishay IRFBC20 Series Power MOSFET, 600V Maximum Drain Source Voltage, 2.2A Maximum Continuous Drain Current - IRFBC20PBF
This power MOSFET is a high-voltage N-channel enhancement device designed for switching and power-control tasks in industrial and electronic systems. It is supplied in a through-hole TO-220AB package and is intended for applications requiring elevated voltage tolerance and robust thermal endurance in conventional board-mounted assemblies.
Features and Benefits:
• 600V drain-to-source rating enables high-voltage switching applications • 2.2A continuous current capacity supports moderate load drivers • 4.4Ω Rds(on) simplifies gate-drive design for low-frequency control • 50W power dissipation allows sustained power handling under cooling • 18nC typical gate charge reduces switching energy at modest speeds • 150°C maximum junction temperature tolerates elevated thermal stress
Applications
• Suitable for high-voltage power supplies and converters • Ideal for industrial motor-drive control stages • Used for load switching in automation equipment • Can be used for gate-controlled power regulation in test rigs • Suitable for replacement in legacy through-hole high-voltage circuits
What gate voltage range is acceptable for operation?
The device permits gate excursions up to 20V relative to source for normal operation.
How does the package support assembly and handling?
The TO-220AB through-hole format provides three-pin mounting and easy heatsink attachment for mechanical stability and thermal management.
What environmental temperature limits apply during use?
It operates across a temperature span down to -55°C and up to a maximum of 150°C junction temperature.
What is the typical switching charge to consider for drive circuitry?
Expect an approximate total gate charge of 18nC at typical drive conditions when sizing driver capability.
Are there recognised material or manufacturing restrictions on the part?
The component conforms to RoHS material restrictions as part of its manufacturing approvals.
Related links
- Vishay IRFBC Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IRFBC20PBF
- Vishay IRFBC Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220 IRFBC40PBF
- Vishay IRFBC Type N-Channel MOSFET 600 V Enhancement, 3-Pin TO-220
- STMicroelectronics MDmesh II Type N-Channel MOSFET 600 V Enhancement, 8-Pin PowerFLAT (3.3 x 3.3) HV STL3NM60N
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin IRFBC20SPBF
- Vishay Single 1 Type N-Channel Power MOSFET 600 V, 3-Pin
- Toshiba SSM3 Type N-Channel MOSFET 30 V Enhancement, 3-Pin UFM SSM3K116TU(TE85L)
- STMicroelectronics MDmesh 2.2 A 3-Pin TO-252 STD4NK100Z