Dual N/P-Channel MOSFET, 3 A, 4 A, 30 V, 8-Pin SOIC Infineon IRF7309PBF
- RS Stock No.:
- 542-9377
- Mfr. Part No.:
- IRF7309PBF
- Brand:
- Infineon
Currently unavailable
We don’t know if this item will be back in stock, it is being discontinued by the manufacturer.
Alternative
This product is not currently available. Here is our alternative recommendation.
Each
£1.45
(exc. VAT)
£1.74
(inc. VAT)
- RS Stock No.:
- 542-9377
- Mfr. Part No.:
- IRF7309PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 3 A, 4 A | |
| Maximum Drain Source Voltage | 30 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 50 mΩ, 100 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 1.4 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 2 | |
| Length | 5mm | |
| Transistor Material | Si | |
| Width | 4mm | |
| Typical Gate Charge @ Vgs | 25 nC @ 4.5 V | |
| Height | 1.5mm | |
| Series | HEXFET | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 3 A, 4 A | ||
Maximum Drain Source Voltage 30 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 50 mΩ, 100 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 1.4 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 2 | ||
Length 5mm | ||
Transistor Material Si | ||
Width 4mm | ||
Typical Gate Charge @ Vgs 25 nC @ 4.5 V | ||
Height 1.5mm | ||
Series HEXFET | ||
Minimum Operating Temperature -55 °C | ||
Dual N/P-Channel Power MOSFET, Infineon
Infineon’s dual power MOSFETs integrate two HEXFET® devices to provide space-saving, cost-effective switching solutions in high component density designs where board space is at a premium. A variety of package options is available and designers can choose the Dual N/P-channel configuration.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
