IRL2703PBF N-Channel MOSFET, 24 A, 30 V HEXFET, 3-Pin TO-220AB Infineon

  • RS Stock No. 541-2177
  • Mfr. Part No. IRL2703PBF
  • Brand Infineon
Technical Reference
Legislation and Compliance
RoHS Certificate of Compliance
Product Details

N-Channel Power MOSFET 30V, Infineon

The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Specifications
Attribute Value
Channel Type N
Maximum Continuous Drain Current 24 A
Maximum Drain Source Voltage 30 V
Maximum Drain Source Resistance 40 mΩ
Maximum Gate Threshold Voltage 1V
Minimum Gate Threshold Voltage 1V
Maximum Gate Source Voltage -16 V, +16 V
Package Type TO-220AB
Mounting Type Through Hole
Pin Count 3
Transistor Configuration Single
Channel Mode Enhancement
Category Power MOSFET
Maximum Power Dissipation 45 W
Maximum Operating Temperature +175 °C
Series HEXFET
Height 8.77mm
Typical Turn-Off Delay Time 12 ns
Typical Input Capacitance @ Vds 450 pF@ 25 V
Typical Gate Charge @ Vgs 15 nC @ 4.5 V
Minimum Operating Temperature -55 °C
Typical Turn-On Delay Time 8.5 ns
Transistor Material Si
Number of Elements per Chip 1
Width 4.69mm
Dimensions 10.54 x 4.69 x 8.77mm
Length 10.54mm
350 In stock for FREE next working day delivery
Price Each
£ 1.98
(exc. VAT)
£ 2.38
(inc. VAT)
Units
Per unit
1 - 24
£1.98
25 - 99
£0.44
100 - 249
£0.34
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