Dual N/P-Channel MOSFET, 3.4 A, 4.7 A, 55 V, 8-Pin SOIC Infineon IRF7343PBF

Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

3.4 A, 4.7 A

Maximum Drain Source Voltage

55 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ, 105 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

1V

Minimum Gate Threshold Voltage

1V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

24 nC @ 10 V, 26 nC @ 10 V

Number of Elements per Chip

2

Width

4mm

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Length

5mm

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm