Dual P-Channel MOSFET, 3.4 A, 55 V, 8-Pin SOIC Infineon IRF7342PBF
- RS Stock No.:
- 541-1764
- Mfr. Part No.:
- IRF7342PBF
- Brand:
- Infineon
Unavailable
RS will no longer stock this product.
- RS Stock No.:
- 541-1764
- Mfr. Part No.:
- IRF7342PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 3.4 A | |
| Maximum Drain Source Voltage | 55 V | |
| Package Type | SOIC | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 105 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1V | |
| Minimum Gate Threshold Voltage | 1V | |
| Maximum Power Dissipation | 2 W | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 26 nC @ 10 V | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Width | 4mm | |
| Length | 5mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.5mm | |
| Series | HEXFET | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type P | ||
Maximum Continuous Drain Current 3.4 A | ||
Maximum Drain Source Voltage 55 V | ||
Package Type SOIC | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 105 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1V | ||
Minimum Gate Threshold Voltage 1V | ||
Maximum Power Dissipation 2 W | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 26 nC @ 10 V | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Width 4mm | ||
Length 5mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.5mm | ||
Series HEXFET | ||
Infineon HEXFET Series MOSFET, 3.4A Maximum Continuous Drain Current, 2W Maximum Power Dissipation - IRF7342TRPBF
This power MOSFET is intended for efficient power management in various electronic devices. Featuring a P-channel configuration, it is suitable for high-performance switching and amplification operations. Its robust specifications meet the essential requirements of engineers and designers in the automation and electrical sectors.
Features & Benefits
• Maximum continuous drain current of 3.4A
• Drain-source voltage tolerance of up to 55V
• Surface mount design allows for straightforward installations
• Low maximum drain-source resistance improves energy efficiency
• Gate threshold voltage of 1 V promotes dependable switching
Applications
• Power management circuits for improved energy utilisation
• Automation equipment requiring robust switching capabilities
• Suitable for motor control systems
• Used in power converters for electronics
• Common in battery management systems
What are the thermal limits for operation?
It operates effectively within a temperature range of -55°C to +150°C, ensuring reliability in various environments.
How does this component enhance circuit efficiency?
The low Rds(on) Value reduces power loss during operation, thereby enhancing overall circuit efficiency.
Can this MOSFET handle pulsed currents?
Yes, it can accommodate pulsed drain currents of up to 27A, suitable for transient conditions.
What type of packaging is it available in?
It is available in an SO-8 surface mount package, optimising layout flexibility and manufacturing processes.
Is there a specific gate voltage for optimal performance?
The gate-to-source voltage should ideally be maintained at ±20V for optimal performance and longevity of the device.