Dual N/P-Channel MOSFET, 4.7 A, 5.7 A, 20 V, 8-Pin SOIC Infineon IRF7307PBF

Brand

Infineon

Channel Type

N, P

Maximum Continuous Drain Current

4.7 A, 5.7 A

Maximum Drain Source Voltage

20 V

Package Type

SOIC

Mounting Type

Surface Mount

Pin Count

8

Maximum Drain Source Resistance

50 mΩ, 90 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

0.7V

Minimum Gate Threshold Voltage

0.7V

Maximum Power Dissipation

2 W

Transistor Configuration

Isolated

Maximum Gate Source Voltage

-12 V, +12 V

Width

4mm

Length

5mm

Number of Elements per Chip

2

Typical Gate Charge @ Vgs

20 nC @ 4.5 V, 22 nC @ 4.5 V

Maximum Operating Temperature

+150 °C

Transistor Material

Si

Series

HEXFET

Minimum Operating Temperature

-55 °C

Height

1.5mm