N-Channel MOSFET, 2.4 A, 500 V, 3-Pin DPAK Vishay IRFR420PBF
- RS Stock No.:
- 540-9929
- Mfr. Part No.:
- IRFR420PBF
- Brand:
- Vishay
Discontinued
- RS Stock No.:
- 540-9929
- Mfr. Part No.:
- IRFR420PBF
- Brand:
- Vishay
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 2.4 A | |
| Maximum Drain Source Voltage | 500 V | |
| Package Type | DPAK (TO-252) | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 3 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Length | 6.73mm | |
| Maximum Operating Temperature | +150 °C | |
| Width | 6.22mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 19 nC @ 10 V | |
| Height | 2.39mm | |
| Priced to Clear | Yes | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type N | ||
Maximum Continuous Drain Current 2.4 A | ||
Maximum Drain Source Voltage 500 V | ||
Package Type DPAK (TO-252) | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 3 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Length 6.73mm | ||
Maximum Operating Temperature +150 °C | ||
Width 6.22mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 19 nC @ 10 V | ||
Height 2.39mm | ||
Priced to Clear Yes | ||
Minimum Operating Temperature -55 °C | ||
N-Channel MOSFET, 500V, Vishay Semiconductor
The Vishay third generation power MOSFETs provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Dynamic dV/dt rating
Repetitive avalanche rated
Fast switching
Ease of paralleling
Repetitive avalanche rated
Fast switching
Ease of paralleling
MOSFET Transistors, Vishay Semiconductor