Name: Infineon HEXFET N-Channel MOSFET, 2.2 A, 100 V, 3 + Tab-Pin SOT-223 IRFL4310PBF
Brand: Infineon
SKU: 540-9884
Price: 0.96 GBP
Availability: Discontinued

Specifications

Technical Reference

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	2.2 A
	Maximum Drain Source Voltage	100 V
	Package Type	SOT-223
	Series	HEXFET
	Mounting Type	Surface Mount
	Pin Count	3 + Tab
	Maximum Drain Source Resistance	200 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	2.1 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Width	3.7mm
	Maximum Operating Temperature	+150 °C
	Length	6.7mm
	Number of Elements per Chip	1
	Transistor Material	Si
	Typical Gate Charge @ Vgs	17 nC @ 10 V
	Height	1.7mm
	Minimum Operating Temperature	-55 °C

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 2.2 A
	Maximum Drain Source Voltage 100 V
	Package Type SOT-223
	Series HEXFET
	Mounting Type Surface Mount
	Pin Count 3 + Tab
	Maximum Drain Source Resistance 200 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 2.1 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Width 3.7mm
	Maximum Operating Temperature +150 °C
	Length 6.7mm
	Number of Elements per Chip 1
	Transistor Material Si
	Typical Gate Charge @ Vgs 17 nC @ 10 V
	Height 1.7mm
	Minimum Operating Temperature -55 °C

N-Channel Power MOSFET 100V, Infineon

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