STMicroelectronics MDmesh, SuperMESH N-Channel MOSFET, 7 A, 600 V, 3-Pin TO-220 STP9NK60Z
- RS Stock No.:
- 486-2385P
- Mfr. Part No.:
- STP9NK60Z
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£14.96
(exc. VAT)
£17.95
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,875 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 95 | £1.496 |
| 100 - 495 | £1.172 |
| 500 - 995 | £0.986 |
| 1000 + | £0.83 |
*price indicative
- RS Stock No.:
- 486-2385P
- Mfr. Part No.:
- STP9NK60Z
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 7 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | MDmesh, SuperMESH | |
| Package Type | TO-220 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 950 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4.5V | |
| Minimum Gate Threshold Voltage | 3V | |
| Maximum Power Dissipation | 125 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.6mm | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
| Height | 9.15mm | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 7 A | ||
Maximum Drain Source Voltage 600 V | ||
Series MDmesh, SuperMESH | ||
Package Type TO-220 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 950 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4.5V | ||
Minimum Gate Threshold Voltage 3V | ||
Maximum Power Dissipation 125 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.6mm | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Typical Gate Charge @ Vgs 38 nC @ 10 V | ||
Height 9.15mm | ||
Minimum Operating Temperature -55 °C | ||
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