STMicroelectronics STripFET II N-Channel MOSFET, 50 A, 60 V, 3-Pin TO-220FP STP55NF06FP
- RS Stock No.:
- 486-2335P
- Mfr. Part No.:
- STP55NF06FP
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied in a tube)*
£8.09
(exc. VAT)
£9.71
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 925 unit(s) shipping from 06 October 2025
- Plus 999,999,070 unit(s) shipping from 10 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 5 + | £1.618 |
*price indicative
- RS Stock No.:
- 486-2335P
- Mfr. Part No.:
- STP55NF06FP
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | TO-220FP | |
| Series | STripFET II | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 18 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 30 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 44.5 nC @ 10 V | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10.4mm | |
| Maximum Operating Temperature | +175 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 9.3mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type TO-220FP | ||
Series STripFET II | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 18 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 30 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 44.5 nC @ 10 V | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10.4mm | ||
Maximum Operating Temperature +175 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 9.3mm | ||
RoHS Status: Not Applicable
N-Channel STripFET™ II, STMicroelectronics
STripFET™ MOSFETs with a wide breakdown voltage range offer ultra-low gate charge and low on-resistance.
MOSFET Transistors, STMicroelectronics