STMicroelectronics STripFET N-Channel MOSFET, 9 A, 200 V, 3-Pin TO-220 IRF630
- RS Stock No.:
- 486-0171
- Mfr. Part No.:
- IRF630
- Brand:
- STMicroelectronics
Bulk discount available
Subtotal (1 pack of 5 units)*
£5.97
(exc. VAT)
£7.165
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 135 unit(s) ready to ship from another location
- Plus 500 unit(s) shipping from 05 November 2025
- Plus 200 unit(s) shipping from 12 November 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit | Per Pack* |
|---|---|---|
| 5 - 20 | £1.194 | £5.97 |
| 25 - 45 | £1.136 | £5.68 |
| 50 - 120 | £1.022 | £5.11 |
| 125 - 245 | £0.918 | £4.59 |
| 250 + | £0.872 | £4.36 |
*price indicative
- RS Stock No.:
- 486-0171
- Mfr. Part No.:
- IRF630
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 9 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-220 | |
| Series | STripFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 400 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 75 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Width | 4.6mm | |
| Typical Gate Charge @ Vgs | 31 nC @ 10 V | |
| Transistor Material | Si | |
| Maximum Operating Temperature | +150 °C | |
| Length | 10.4mm | |
| Number of Elements per Chip | 1 | |
| Minimum Operating Temperature | -65 °C | |
| Height | 9.15mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 9 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-220 | ||
Series STripFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 400 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 75 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Width 4.6mm | ||
Typical Gate Charge @ Vgs 31 nC @ 10 V | ||
Transistor Material Si | ||
Maximum Operating Temperature +150 °C | ||
Length 10.4mm | ||
Number of Elements per Chip 1 | ||
Minimum Operating Temperature -65 °C | ||
Height 9.15mm | ||
N-Channel STripFET™, STMicroelectronics
MOSFET Transistors, STMicroelectronics
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