STMicroelectronics STripFET N-Channel MOSFET, 6 A, 20 V, 8-Pin SOIC STS6NF20V
- RS Stock No.:
- 485-8386P
- Mfr. Part No.:
- STS6NF20V
- Brand:
- STMicroelectronics
Subtotal 5 units (supplied on a continuous strip)*
£2.84
(exc. VAT)
£3.41
(inc. VAT)
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In Stock
- 2,290 unit(s) ready to ship
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Units | Per unit |
|---|---|
| 5 + | £0.568 |
*price indicative
- RS Stock No.:
- 485-8386P
- Mfr. Part No.:
- STS6NF20V
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 6 A | |
| Maximum Drain Source Voltage | 20 V | |
| Package Type | SOIC | |
| Series | STripFET | |
| Mounting Type | Surface Mount | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.6V | |
| Maximum Power Dissipation | 2.5 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -12 V, +12 V | |
| Number of Elements per Chip | 1 | |
| Length | 5mm | |
| Transistor Material | Si | |
| Typical Gate Charge @ Vgs | 8.5 nC @ 4.5 V | |
| Maximum Operating Temperature | +150 °C | |
| Width | 4mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1.25mm | |
Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 6 A | ||
Maximum Drain Source Voltage 20 V | ||
Package Type SOIC | ||
Series STripFET | ||
Mounting Type Surface Mount | ||
Pin Count 8 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.6V | ||
Maximum Power Dissipation 2.5 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -12 V, +12 V | ||
Number of Elements per Chip 1 | ||
Length 5mm | ||
Transistor Material Si | ||
Typical Gate Charge @ Vgs 8.5 nC @ 4.5 V | ||
Maximum Operating Temperature +150 °C | ||
Width 4mm | ||
Minimum Operating Temperature -55 °C | ||
Height 1.25mm | ||
N-Channel STripFET™, STMicroelectronics
The STMicroelectronics power MOSFET has been developed using unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.
Ultra low threshold gate drive
100% avalanche tested
Low gate charge
100% avalanche tested
Low gate charge
MOSFET Transistors, STMicroelectronics