Infineon SIPMOS® N-Channel MOSFET, 1.8 A, 60 V, 3-Pin SOT-223 BSP295H6327XTSA1
- RS Stock No.:
- 445-2269P
- Mfr. Part No.:
- BSP295H6327XTSA1
- Brand:
- Infineon
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Subtotal 50 units (supplied on a continuous strip)*
£28.50
(exc. VAT)
£34.00
(inc. VAT)
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In Stock
- Plus 5,000 unit(s) shipping from 13 October 2025
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Units | Per unit |
|---|---|
| 50 - 120 | £0.57 |
| 125 - 245 | £0.532 |
| 250 - 495 | £0.492 |
| 500 + | £0.454 |
*price indicative
- RS Stock No.:
- 445-2269P
- Mfr. Part No.:
- BSP295H6327XTSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 1.8 A | |
| Maximum Drain Source Voltage | 60 V | |
| Package Type | SOT-223 | |
| Series | SIPMOS® | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 300 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 1.8V | |
| Minimum Gate Threshold Voltage | 0.8V | |
| Maximum Power Dissipation | 1.8 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 14 nC @ 10 V | |
| Length | 6.5mm | |
| Transistor Material | Si | |
| Width | 3.5mm | |
| Maximum Operating Temperature | +150 °C | |
| Automotive Standard | AEC-Q101 | |
| Forward Diode Voltage | 1.3V | |
| Height | 1.6mm | |
| Minimum Operating Temperature | -55 °C | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 1.8 A | ||
Maximum Drain Source Voltage 60 V | ||
Package Type SOT-223 | ||
Series SIPMOS® | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 300 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 1.8V | ||
Minimum Gate Threshold Voltage 0.8V | ||
Maximum Power Dissipation 1.8 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 14 nC @ 10 V | ||
Length 6.5mm | ||
Transistor Material Si | ||
Width 3.5mm | ||
Maximum Operating Temperature +150 °C | ||
Automotive Standard AEC-Q101 | ||
Forward Diode Voltage 1.3V | ||
Height 1.6mm | ||
Minimum Operating Temperature -55 °C | ||
Infineon SIPMOS® N-Channel MOSFETs
Infineon SIPMOS® Series MOSFET, 1.8A Maximum Continuous Drain Current, 1.8W Maximum Power Dissipation - BSP295H6327XTSA1
This MOSFET is engineered for high-performance applications in automation and electronics. Its N-channel configuration combined with an efficient surface mount design allows for effective current control, making it suitable for a range of industrial applications. It supports a maximum drain-source voltage of 60V, ensuring consistent performance for various projects.
Features & Benefits
• Continuously handles a drain current of 1.8A
• Low maximum drain-source resistance of 300mΩ
• Wide gate-source voltage range from -20V to +20V
• Qualified to AEC-Q101 automotive standard for reliability
• Low maximum drain-source resistance of 300mΩ
• Wide gate-source voltage range from -20V to +20V
• Qualified to AEC-Q101 automotive standard for reliability
Applications
• Power management systems for efficient output control
• Motor drives for reliable switching operations
• Signal amplification in various electronic devices
• Automotive electronic control units
• Motor drives for reliable switching operations
• Signal amplification in various electronic devices
• Automotive electronic control units
What is the typical power dissipation of the component?
It can dissipate up to 1.8W under specified conditions for effective heat management during operation.
How does the gate threshold voltage affect performance?
The maximum gate threshold voltage is 1.8V, which enables the MOSFET to achieve optimal performance at low input levels.
Can this component handle pulsed drain currents?
Yes, it is rated for pulsed drain current up to 6A, allowing it to effectively manage transient conditions.
What packaging options are available?
The MOSFET is available in a SOT-223 surface mount package, optimised for space-efficient designs.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
