Infineon CoolMOS S5 N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 SPW20N60S5FKSA1
- RS Stock No.:
- 354-6414P
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Brand:
- Infineon
Bulk discount available
Subtotal 10 units (supplied in a tube)*
£51.70
(exc. VAT)
£62.00
(inc. VAT)
FREE delivery for orders over £50.00
Temporarily out of stock
- 230 unit(s) shipping from 10 April 2026
- Plus 240 unit(s) shipping from 08 May 2026
- Plus 240 unit(s) shipping from 08 July 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 24 | £5.17 |
| 25 - 49 | £5.06 |
| 50 - 99 | £4.73 |
| 100 + | £4.35 |
*price indicative
- RS Stock No.:
- 354-6414P
- Mfr. Part No.:
- SPW20N60S5FKSA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Series | CoolMOS S5 | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 5.5V | |
| Minimum Gate Threshold Voltage | 3.5V | |
| Maximum Power Dissipation | 208 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Typical Gate Charge @ Vgs | 79 nC @ 10 V | |
| Width | 5.3mm | |
| Maximum Operating Temperature | +150 °C | |
| Transistor Material | Si | |
| Length | 15.9mm | |
| Number of Elements per Chip | 1 | |
| Height | 20.95mm | |
| Forward Diode Voltage | 1.2V | |
| Minimum Operating Temperature | -55 °C | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Series CoolMOS S5 | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 5.5V | ||
Minimum Gate Threshold Voltage 3.5V | ||
Maximum Power Dissipation 208 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Typical Gate Charge @ Vgs 79 nC @ 10 V | ||
Width 5.3mm | ||
Maximum Operating Temperature +150 °C | ||
Transistor Material Si | ||
Length 15.9mm | ||
Number of Elements per Chip 1 | ||
Height 20.95mm | ||
Forward Diode Voltage 1.2V | ||
Minimum Operating Temperature -55 °C | ||
Infineon CoolMOS™S5 Power MOSFET Family
Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1
This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.
Features & Benefits
• N-channel configuration enhances switching capabilities
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control
Applications
• Power conversion in industrial automation systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems
What are the thermal resistance characteristics for this component?
The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.
Is it suitable for use in harsh environments?
Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.
What is the maximum gate-to-source voltage that can be applied?
The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.
Can it handle repetitive avalanche currents?
Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
