Infineon CoolMOS S5 N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 SPW20N60S5FKSA1

RS Stock No.:: 354-6414
Mfr. Part No.:: SPW20N60S5FKSA1
Brand:: Infineon

Infineon CoolMOS S5 N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-247 SPW20N60S5FKSA1

Bulk discount available

Subtotal (1 unit)*

£5.44

(exc. VAT)

£6.53

(inc. VAT)

FREE delivery for orders over £50.00

Temporarily out of stock

148 unit(s) shipping from 13 November 2025
Plus 240 unit(s) shipping from 17 April 2026
Plus 240 unit(s) shipping from 15 May 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit
1 - 9	£5.44
10 - 24	£5.17
25 - 49	£5.06
50 - 99	£4.73
100 +	£4.35

*price indicative

RS Stock No.:: 354-6414
Mfr. Part No.:: SPW20N60S5FKSA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	20 A
	Maximum Drain Source Voltage	600 V
	Package Type	TO-247
	Series	CoolMOS S5
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	190 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5.5V
	Minimum Gate Threshold Voltage	3.5V
	Maximum Power Dissipation	208 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	15.9mm
	Number of Elements per Chip	1
	Width	5.3mm
	Maximum Operating Temperature	+150 °C
	Typical Gate Charge @ Vgs	79 nC @ 10 V
	Transistor Material	Si
	Minimum Operating Temperature	-55 °C
	Height	20.95mm
	Forward Diode Voltage	1.2V

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 20 A
	Maximum Drain Source Voltage 600 V
	Package Type TO-247
	Series CoolMOS S5
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 190 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5.5V
	Minimum Gate Threshold Voltage 3.5V
	Maximum Power Dissipation 208 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 15.9mm
	Number of Elements per Chip 1
	Width 5.3mm
	Maximum Operating Temperature +150 °C
	Typical Gate Charge @ Vgs 79 nC @ 10 V
	Transistor Material Si
	Minimum Operating Temperature -55 °C
	Height 20.95mm
	Forward Diode Voltage 1.2V

COO (Country of Origin):: CN

Infineon CoolMOS™S5 Power MOSFET Family

Infineon CoolMOS S5 Series MOSFET, 20A Maximum Continuous Drain Current, 208W Maximum Power Dissipation - SPW20N60S5FKSA1

This MOSFET is tailored for high voltage applications, delivering noteworthy efficiency and performance. It plays a vital role in industries that depend on effective power management and semiconductor functionality. Utilising advanced Si technology, it operates efficiently across a broad temperature spectrum, making it suitable for a variety of applications in automation and electrical systems.

Features & Benefits

• N-channel configuration enhances switching capabilities
• Maximum continuous drain current of 20A accommodates high loads
• High voltage rating of 600V for demanding use cases
• Ultra-low gate charge enhances switching efficiency
• Enhancement mode allows for precise operational control

Applications

• Power conversion in industrial automation systems
• Ideal for motor drives and control systems
• Power supplies for renewable energy
• UPS and backup power systems

What are the thermal resistance characteristics for this component?

The thermal resistance from junction to case is 0.6K/W, facilitating effective heat dissipation during operation.

Is it suitable for use in harsh environments?

Yes, it functions within a temperature range of -55°C to +150°C, allowing versatility for various conditions.

What is the maximum gate-to-source voltage that can be applied?

The maximum gate-source voltage is ±20V, providing flexibility in driving conditions.

Can it handle repetitive avalanche currents?

Yes, it can manage repetitive avalanche currents up to 20A, ensuring robustness against transient conditions.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.