onsemi Dual N/P-Channel-Channel MOSFET, 460 mA, 680 mA, 25 V, 6-Pin SOT-23 FDC6321C
- RS Stock No.:
- 354-4985P
- Mfr. Part No.:
- FDC6321C
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£4.40
(exc. VAT)
£5.30
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 4,907 unit(s) shipping from 06 October 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | £0.44 |
| 100 - 499 | £0.38 |
| 500 - 999 | £0.34 |
| 1000 + | £0.31 |
*price indicative
- RS Stock No.:
- 354-4985P
- Mfr. Part No.:
- FDC6321C
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | N, P | |
| Maximum Continuous Drain Current | 460 mA, 680 mA | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance | 1.1 Ω, 450 mΩ | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 900 mW | |
| Transistor Configuration | Isolated | |
| Maximum Gate Source Voltage | -8 V, +8 V | |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V | |
| Length | 3mm | |
| Width | 1.7mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 2 | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 1mm | |
Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type N, P | ||
Maximum Continuous Drain Current 460 mA, 680 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 6 | ||
Maximum Drain Source Resistance 1.1 Ω, 450 mΩ | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 900 mW | ||
Transistor Configuration Isolated | ||
Maximum Gate Source Voltage -8 V, +8 V | ||
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V, 1.64 nC @ 4.5 V | ||
Length 3mm | ||
Width 1.7mm | ||
Transistor Material Si | ||
Number of Elements per Chip 2 | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 1mm | ||
Digital FETs, Fairchild Semiconductor
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.