onsemi P-Channel MOSFET, 460 mA, 25 V, 3-Pin SOT-23 FDV304P
- RS Stock No.:
- 354-4913P
- Mfr. Part No.:
- FDV304P
- Brand:
- onsemi
Bulk discount available
Subtotal 10 units (supplied on a continuous strip)*
£2.30
(exc. VAT)
£2.80
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 27,382 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 10 - 99 | £0.23 |
| 100 - 499 | £0.20 |
| 500 - 999 | £0.18 |
| 1000 + | £0.16 |
*price indicative
- RS Stock No.:
- 354-4913P
- Mfr. Part No.:
- FDV304P
- Brand:
- onsemi
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | onsemi | |
| Channel Type | P | |
| Maximum Continuous Drain Current | 460 mA | |
| Maximum Drain Source Voltage | 25 V | |
| Package Type | SOT-23 | |
| Mounting Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 1.1 Ω | |
| Channel Mode | Enhancement | |
| Minimum Gate Threshold Voltage | 0.65V | |
| Maximum Power Dissipation | 350 mW | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | +8 V | |
| Width | 1.3mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Typical Gate Charge @ Vgs | 1.1 nC @ 4.5 V | |
| Length | 2.92mm | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 0.93mm | |
| Select all | ||
|---|---|---|
Brand onsemi | ||
Channel Type P | ||
Maximum Continuous Drain Current 460 mA | ||
Maximum Drain Source Voltage 25 V | ||
Package Type SOT-23 | ||
Mounting Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 1.1 Ω | ||
Channel Mode Enhancement | ||
Minimum Gate Threshold Voltage 0.65V | ||
Maximum Power Dissipation 350 mW | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage +8 V | ||
Width 1.3mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Typical Gate Charge @ Vgs 1.1 nC @ 4.5 V | ||
Length 2.92mm | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 0.93mm | ||
Enhancement Mode P-Channel MOSFET, ON Semiconductor
ON Semiconductors range of P-Channel MOSFETS are produced using ON Semi’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance to provide a rugged and reliable performance for fast switching.
Features and Benefits:
• Voltage controlled P-Channel small signal switch
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
• High-Density cell design
• High saturation current
• Superior switching
• Great rugged and reliable performance
• DMOS technology
Applications:
• Load Switching
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
• DC/DC converter
• Battery protection
• Power management control
• DC motor control
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.