STMicroelectronics STW N-Channel MOSFET, 56 A Enhancement, 3-Pin TO-247 STWA60N043DM9
- RS Stock No.:
- 275-1384P
- Mfr. Part No.:
- STWA60N043DM9
- Brand:
- STMicroelectronics
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£60.60
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£72.70
(inc. VAT)
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In Stock
- Plus 236 unit(s) shipping from 28 September 2026
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Units | Per unit |
|---|---|
| 10 - 119 | £6.06 |
| 120 - 509 | £5.38 |
| 510 - 1019 | £5.24 |
| 1020 + | £5.18 |
*price indicative
- RS Stock No.:
- 275-1384P
- Mfr. Part No.:
- STWA60N043DM9
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 56A | |
| Series | STW | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 43mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 78.6nC | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.6V | |
| Maximum Power Dissipation Pd | 312W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 56A | ||
Series STW | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 43mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 78.6nC | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.6V | ||
Maximum Power Dissipation Pd 312W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super junction MDmesh DM9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast recovery diode. The silicon based DM9 technology benefits from a multi drain manufacturing process which allows an enhanced device structure.
Fast recovery body diode
Worldwide best RDS per area among silicon based fast recovery devices
Low gate charge, input capacitance and resistance
100 percent avalanche tested