STMicroelectronics STW Type N-Channel MOSFET, 92 A Enhancement, 4-Pin TO-247-4 STW65N023M9-4
- RS Stock No.:
- 275-1382
- Mfr. Part No.:
- STW65N023M9-4
- Brand:
- STMicroelectronics
Subtotal (1 unit)*
£10.37
(exc. VAT)
£12.44
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- Plus 285 unit(s) shipping from 19 January 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 1 + | £10.37 |
*price indicative
- RS Stock No.:
- 275-1382
- Mfr. Part No.:
- STW65N023M9-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 92A | |
| Series | STW | |
| Package Type | TO-247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 463W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Typical Gate Charge Qg @ Vgs | 230nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 5mm | |
| Standards/Approvals | RoHS | |
| Width | 15.8 mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 92A | ||
Series STW | ||
Package Type TO-247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 463W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Typical Gate Charge Qg @ Vgs 230nC | ||
Maximum Operating Temperature 150°C | ||
Height 5mm | ||
Standards/Approvals RoHS | ||
Width 15.8 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Related links
- STMicroelectronics Dual Silicon N-Channel MOSFET 92 A, 4-Pin TO247-4 STW65N023M9-4
- STMicroelectronics Dual Silicon N-Channel MOSFET 92 A, 3-Pin TO-247 STWA65N023M9
- STMicroelectronics STW65N Silicon N-Channel MOSFET 650 V, 3-Pin TO247-4 STW65N045M9-4
- STMicroelectronics Dual Silicon N-Channel MOSFET 56 A, 3-Pin TO-247 STWA60N043DM9
- onsemi NTH SiC N-Channel MOSFET 1200 V, 4-Pin TO247-4L NTH4L013N120M3S
- Infineon AIM SiC N-Channel MOSFET 750 V, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1
- Infineon AIM SiC N-Channel MOSFET 1200 V, 4-Pin PG-TO247-4 AIMZH120R020M1TXKSA1
- STMicroelectronics STGW100H65FB2-4 IGBT 4-Pin TO247-4
