STMicroelectronics Dual Silicon N-Channel MOSFET, 92 A, 92 A, 4-Pin TO247-4 STW65N023M9-4
- RS Stock No.:
- 275-1382
- Mfr. Part No.:
- STW65N023M9-4
- Brand:
- STMicroelectronics
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1 + | £10.37 |
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- RS Stock No.:
- 275-1382
- Mfr. Part No.:
- STW65N023M9-4
- Brand:
- STMicroelectronics
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | STMicroelectronics | |
Channel Type | N | |
Maximum Continuous Drain Current | 92 A | |
Maximum Drain Source Voltage | 92 A | |
Package Type | TO247-4 | |
Mounting Type | Through Hole | |
Pin Count | 4 | |
Channel Mode | Enhancement | |
Number of Elements per Chip | 2 | |
Transistor Material | Silicon | |
Select all | ||
---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 92 A | ||
Maximum Drain Source Voltage 92 A | ||
Package Type TO247-4 | ||
Mounting Type Through Hole | ||
Pin Count 4 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 2 | ||
Transistor Material Silicon | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel power MOSFET is based on the most innovative super-junction MDmesh M9 technology, suitable for medium or high voltage MOSFETs featuring very low RDS(on) per area. The silicon based M9 technology benefits from a multi-drain manufacturing process which allows an enhanced device structure. The resulting product has one of the lower on resistance and reduced gate charge values, among all silicon based fast switching super junction power MOSFETs, making it particularly suitable for applications that require superior power density and outstanding efficiency.
Excellent switching performance
Easy to drive
100 percent avalanche tested
Easy to drive
100 percent avalanche tested
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