MPN

Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4

RS Stock No.:: 273-5350
Mfr. Part No.:: IPL65R230C7AUMA1
Brand:: Infineon

Infineon CoolMOS C7 Type N-Channel MOSFET, 10 A, 700 V Enhancement, 4-Pin PG-VSON-4

Bulk discount available

Subtotal (1 pack of 2 units)*

£3.70

(exc. VAT)

£4.44

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 80 unit(s) shipping from 29 December 2025

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per unit	Per Pack*
2 - 48	£1.85	£3.70
50 - 98	£1.54	£3.08
100 - 248	£1.425	£2.85
250 - 998	£1.32	£2.64
1000 +	£1.29	£2.58

*price indicative

RS Stock No.:: 273-5350
Mfr. Part No.:: IPL65R230C7AUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	10A
	Maximum Drain Source Voltage Vds	700V
	Package Type	PG-VSON-4
	Series	CoolMOS C7
	Mount Type	Surface
	Pin Count	4
	Maximum Drain Source Resistance Rds	0.23Ω
	Channel Mode	Enhancement
	Forward Voltage Vf	0.8V
	Typical Gate Charge Qg @ Vgs	20nC
	Maximum Power Dissipation Pd	67W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-40°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC(J-STD20 andJESD22)
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 10A
	Maximum Drain Source Voltage Vds 700V
	Package Type PG-VSON-4
	Series CoolMOS C7
	Mount Type Surface
	Pin Count 4
	Maximum Drain Source Resistance Rds 0.23Ω
	Channel Mode Enhancement
	Forward Voltage Vf 0.8V
	Typical Gate Charge Qg @ Vgs 20nC
	Maximum Power Dissipation Pd 67W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -40°C
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC(J-STD20 andJESD22)
	Automotive Standard No

Datasheet - IPL65R230C7AUMA1

The Infineon Power MOSFET constructed with CoolMOS™ revolutionary technology for high voltage power MOSFETs. It is designed according to the super junction principle and pioneered by Infineon Technologies. CoolMOS™ C7 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The product portfolio provides all benefits of fast switching super junction MOSFETs offering better efficiency, reduced gate charge, easy implementation and outstanding reliability.

Halogen free

Better efficiency

Pb free lead plating

High power density

Better control of the gate