MPN

Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8

RS Stock No.:: 273-5242
Mfr. Part No.:: BSO080P03SHXUMA1
Brand:: Infineon

Infineon BSO080P03S H OptiMOSTM-P Type P-Channel MOSFET, -14.9 A, -30 V Enhancement, 8-Pin PG-DSO-8

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Subtotal (1 pack of 5 units)*

£6.21

(exc. VAT)

£7.45

(inc. VAT)

FREE delivery for orders over £50.00

In Stock

Plus 90 unit(s) shipping from 19 January 2026

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Units	Per unit	Per Pack*
5 - 45	£1.242	£6.21
50 - 95	£1.034	£5.17
100 - 245	£0.956	£4.78
250 - 995	£0.886	£4.43
1000 +	£0.868	£4.34

*price indicative

RS Stock No.:: 273-5242
Mfr. Part No.:: BSO080P03SHXUMA1
Brand:: Infineon

Specifications

Technical Reference

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-14.9A
	Maximum Drain Source Voltage Vds	-30V
	Series	BSO080P03S H OptiMOSTM-P
	Package Type	PG-DSO-8
	Mount Type	Surface
	Pin Count	8
	Channel Mode	Enhancement
	Forward Voltage Vf	-0.82V
	Maximum Gate Source Voltage Vgs	25 V
	Maximum Power Dissipation Pd	2.5W
	Typical Gate Charge Qg @ Vgs	-102nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	IEC61249-2-21, JEDEC, RoHS
	Length	40mm
	Width	40 mm
	Height	1.5mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -14.9A
	Maximum Drain Source Voltage Vds -30V
	Series BSO080P03S H OptiMOSTM-P
	Package Type PG-DSO-8
	Mount Type Surface
	Pin Count 8
	Channel Mode Enhancement
	Forward Voltage Vf -0.82V
	Maximum Gate Source Voltage Vgs 25 V
	Maximum Power Dissipation Pd 2.5W
	Typical Gate Charge Qg @ Vgs -102nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals IEC61249-2-21, JEDEC, RoHS
	Length 40mm
	Width 40 mm
	Height 1.5mm
	Automotive Standard No

Datasheet - BSO080P03SHXUMA1

The Infineon MOSFET is a P channel power MOSFET. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on state resistance and figure of merit characteristics. It has 150 degree Celsius operating temperature and qualified according JEDEC for target applications.

Logic level

Halogen free

RoHS compliant

Pb free lead plating

Enhancement mode