Infineon ISP Type P-Channel P-Channel, 1.9 A, 60 V Enhancement, 3-Pin PG-SOT223
- RS Stock No.:
- 273-3042
- Mfr. Part No.:
- ISP26DP06NMSATMA1
- Brand:
- Infineon
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View bulk pricing optionsSubtotal (1 pack of 25 units)*
£7.575
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£9.10
(inc. VAT)
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- Plus 2,900 unit(s) shipping from 01 June 2026
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Units | Per unit | Per Pack* |
|---|---|---|
| 25 - 25 | £0.303 | £7.58 |
| 50 - 75 | £0.28 | £7.00 |
| 100 - 225 | £0.261 | £6.53 |
| 250 - 975 | £0.255 | £6.38 |
| 1000 + | £0.25 | £6.25 |
*price indicative
- RS Stock No.:
- 273-3042
- Mfr. Part No.:
- ISP26DP06NMSATMA1
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | P-Channel | |
| Maximum Continuous Drain Current Id | 1.9A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | PG-SOT223 | |
| Series | ISP | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 260mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 5W | |
| Typical Gate Charge Qg @ Vgs | 10.8nC | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS, IEC61249-2-21 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type P-Channel | ||
Maximum Continuous Drain Current Id 1.9A | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type PG-SOT223 | ||
Series ISP | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 260mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 5W | ||
Typical Gate Charge Qg @ Vgs 10.8nC | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS, IEC61249-2-21 | ||
Automotive Standard No | ||
The Infineon P-channel MOSFET in normal and logic level, reducing design complexity in medium and low power applications.
Easy interface to MCU
Fast switching
Avalanche ruggedness
Related links
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