SiC N-Channel MOSFET, 56 A, 1200 V, 7-Pin D2PAK Infineon IMBG120R030M1HXTMA1
- RS Stock No.:
- 273-2765
- Mfr. Part No.:
- IMBG120R030M1HXTMA1
- Brand:
- Infineon
Available to back order for despatch when stock is available
Price Each (On a Reel of 1000)
£10.90
(exc. VAT)
£13.08
(inc. VAT)
Units | Per unit | Per Reel* |
|---|---|---|
| 1000 + | £10.90 | £10,900.00 |
*price indicative
- RS Stock No.:
- 273-2765
- Mfr. Part No.:
- IMBG120R030M1HXTMA1
- Brand:
- Infineon
Technical Reference
Legislation and Compliance
Product Details
The Infineon MOSFET has reduction in system complexity and cost. This MOSFET has features a robust body diode for hard commutation, benchmark gate threshold voltage is 4.5V, sense pin for optimized switching performance and .XT interconnection technology for best in class thermal performance. The package creepage and clearance distance is greater than 6.1 mm.
Efficiency improvement
Cooling effort reduction
Increased power density
Very low switching losses
Enabling higher frequency
Robust against parasitic turn on
Cooling effort reduction
Increased power density
Very low switching losses
Enabling higher frequency
Robust against parasitic turn on
Specifications
Attribute | Value |
|---|---|
| Channel Type | N |
| Maximum Continuous Drain Current | 56 A |
| Maximum Drain Source Voltage | 1200 V |
| Package Type | TO-263 |
| Mounting Type | Through Hole |
| Pin Count | 7 |
| Channel Mode | Enhancement |
| Transistor Material | SiC |
| Number of Elements per Chip | 1 |
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