Infineon HEXFET Dual Silicon N-Channel MOSFET, 56 A, 100 V, 3-Pin IPAK IRFU4510PBF
- RS Stock No.:
- 262-6779P
- Mfr. Part No.:
- IRFU4510PBF
- Brand:
- Infineon
Bulk discount available
Subtotal 50 units (supplied in a tube)*
£44.00
(exc. VAT)
£53.00
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 2,985 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
|---|---|
| 50 - 120 | £0.88 |
| 125 - 245 | £0.82 |
| 250 - 495 | £0.636 |
| 500 + | £0.53 |
*price indicative
- RS Stock No.:
- 262-6779P
- Mfr. Part No.:
- IRFU4510PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 56 A | |
| Maximum Drain Source Voltage | 100 V | |
| Package Type | IPAK | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Channel Mode | Enhancement | |
| Transistor Material | Silicon | |
| Number of Elements per Chip | 2 | |
Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 56 A | ||
Maximum Drain Source Voltage 100 V | ||
Package Type IPAK | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Enhanced body diode dV/dt and dI/dt capability
