Infineon HEXFET Dual Silicon N-Channel MOSFET, 195 A, 40 V, 3-Pin TO-262 IRFSL7437PBF
- RS Stock No.:
- 262-6774P
- Mfr. Part No.:
- IRFSL7437PBF
- Brand:
- Infineon
Bulk discount available
Subtotal 25 units (supplied in a tube)*
£43.65
(exc. VAT)
£52.375
(inc. VAT)
FREE delivery for orders over £50.00
In Stock
- 1,090 unit(s) ready to ship
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per unit |
---|---|
25 - 45 | £1.746 |
50 - 120 | £1.63 |
125 - 245 | £1.514 |
250 + | £1.416 |
*price indicative
- RS Stock No.:
- 262-6774P
- Mfr. Part No.:
- IRFSL7437PBF
- Brand:
- Infineon
Specifications
Technical Reference
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
---|---|---|
Brand | Infineon | |
Channel Type | N | |
Maximum Continuous Drain Current | 195 A | |
Maximum Drain Source Voltage | 40 V | |
Package Type | TO-262 | |
Series | HEXFET | |
Mounting Type | Through Hole | |
Pin Count | 3 | |
Channel Mode | Enhancement | |
Transistor Material | Silicon | |
Number of Elements per Chip | 2 | |
Select all | ||
---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 195 A | ||
Maximum Drain Source Voltage 40 V | ||
Package Type TO-262 | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Channel Mode Enhancement | ||
Transistor Material Silicon | ||
Number of Elements per Chip 2 | ||
The Infineon power MOSFET provides benefits such as improved gate, avalanche and dynamic dV/dt ruggedness and fully characterized capacitance and avalanche SOA.
Halogen free
Enhanced body diode dV/dt and dI/dt capability
Enhanced body diode dV/dt and dI/dt capability