Infineon Dual SiC N-Channel MOSFET, 223 A, 60 V, 7-Pin PG-TO263-7 IPF016N06NF2SATMA1

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Subtotal (1 reel of 800 units)*

£756.80

(exc. VAT)

£908.00

(inc. VAT)

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Units
Per unit
Per Reel*
800 - 800£0.946£756.80
1600 +£0.899£719.20

*price indicative

RS Stock No.:
262-5880
Mfr. Part No.:
IPF016N06NF2SATMA1
Brand:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

223 A

Maximum Drain Source Voltage

60 V

Package Type

PG-TO263-7

Mounting Type

Surface Mount

Pin Count

7

Channel Mode

Enhancement

Transistor Material

SiC

Number of Elements per Chip

2

The Infineon N channel power transistor is optimized for wide range of applications and it is 100 percent avalanche tested.

Pb-free lead plating
RoHS compliant
Halogen free according to IEC61249-2-21

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